High-performance transistors based on zinc tin oxides by single spin-coating process

Films of zinc tin oxide (ZTO), grown from solutions with zinc acetate dehydrate and tin(II) 2-ethylhexanoate dissolved in 2-methoxyethanol, have been used to fabricate thin-film transistors in combination with solution-processed aluminum oxide as the gate insulator. And the nonhomogeneity of the sin...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 29(2013), 1 vom: 08. Jan., Seite 151-7
1. Verfasser: Zhao, Yunlong (VerfasserIn)
Weitere Verfasser: Duan, Lian, Dong, Guifang, Zhang, Deqiang, Qiao, Juan, Wang, Liduo, Qiu, Yong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article