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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201203807
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|a eng
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|a Kalbac, Martin
|e verfasserin
|4 aut
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|a Ion-irradiation-induced defects in isotopically-labeled two layered graphene
|b enhanced in-situ annealing of the damage
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|c 2013
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|a Text
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|a ƒaComputermedien
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|a Date Completed 19.08.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Contrary to theoretical estimates based on the conventional binary collision model, experimental results indicate that the number of defects in the lower layer of the bi-layer graphene sample is smaller than in the upper layer. This observation is explained by in situ self-annealing of the defects
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|a Research Support, Non-U.S. Gov't
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|a Lehtinen, Ossi
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|a Krasheninnikov, Arkady V
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|a Keinonen, Juhani
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|t Advanced materials (Deerfield Beach, Fla.)
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|g 25(2013), 7 vom: 20. Feb., Seite 1004-9
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|u http://dx.doi.org/10.1002/adma.201203807
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