Ion-irradiation-induced defects in isotopically-labeled two layered graphene enhanced in-situ annealing of the damage

Ion-irradiation-induced defects in isotopically-labeled two layered graphene : enhanced in-situ annealing of the damage

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 7 vom: 20. Feb., Seite 1004-9
1. Verfasser: Kalbac, Martin (VerfasserIn)
Weitere Verfasser: Lehtinen, Ossi, Krasheninnikov, Arkady V, Keinonen, Juhani
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Carbon Isotopes Ions Argon 67XQY1V3KH Silicon Dioxide 7631-86-9 Graphite 7782-42-5
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Contrary to theoretical estimates based on the conventional binary collision model, experimental results indicate that the number of defects in the lower layer of the bi-layer graphene sample is smaller than in the upper layer. This observation is explained by in situ self-annealing of the defects
Beschreibung:Date Completed 19.08.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201203807