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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201202973
|2 doi
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|a eng
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|a Chen, Jianyi
|e verfasserin
|4 aut
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|a Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates
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|c 2013
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|a Text
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|a ƒaComputermedien
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|a Date Completed 19.08.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm(2) V(-1) s(-1) , which is about three times the value of those grown on SiO(2) /Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Guo, Yunlong
|e verfasserin
|4 aut
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|a Wen, Yugeng
|e verfasserin
|4 aut
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|a Huang, Liping
|e verfasserin
|4 aut
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|a Xue, Yunzhou
|e verfasserin
|4 aut
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|a Geng, Dechao
|e verfasserin
|4 aut
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|a Wu, Bin
|e verfasserin
|4 aut
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|a Luo, Birong
|e verfasserin
|4 aut
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|a Yu, Gui
|e verfasserin
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|a Liu, Yunqi
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 7 vom: 20. Feb., Seite 992-7
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|x 1521-4095
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|g volume:25
|g year:2013
|g number:7
|g day:20
|g month:02
|g pages:992-7
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|u http://dx.doi.org/10.1002/adma.201202973
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