Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 7 vom: 20. Feb., Seite 992-7
1. Verfasser: Chen, Jianyi (VerfasserIn)
Weitere Verfasser: Guo, Yunlong, Wen, Yugeng, Huang, Liping, Xue, Yunzhou, Geng, Dechao, Wu, Bin, Luo, Birong, Yu, Gui, Liu, Yunqi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
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520 |a By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm(2) V(-1) s(-1) , which is about three times the value of those grown on SiO(2) /Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
700 1 |a Guo, Yunlong  |e verfasserin  |4 aut 
700 1 |a Wen, Yugeng  |e verfasserin  |4 aut 
700 1 |a Huang, Liping  |e verfasserin  |4 aut 
700 1 |a Xue, Yunzhou  |e verfasserin  |4 aut 
700 1 |a Geng, Dechao  |e verfasserin  |4 aut 
700 1 |a Wu, Bin  |e verfasserin  |4 aut 
700 1 |a Luo, Birong  |e verfasserin  |4 aut 
700 1 |a Yu, Gui  |e verfasserin  |4 aut 
700 1 |a Liu, Yunqi  |e verfasserin  |4 aut 
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