Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates

Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 7 vom: 20. Feb., Seite 992-7
1. Verfasser: Chen, Jianyi (VerfasserIn)
Weitere Verfasser: Guo, Yunlong, Wen, Yugeng, Huang, Liping, Xue, Yunzhou, Geng, Dechao, Wu, Bin, Luo, Birong, Yu, Gui, Liu, Yunqi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm(2) V(-1) s(-1) , which is about three times the value of those grown on SiO(2) /Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice
Beschreibung:Date Completed 19.08.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201202973