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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1021/la303554z
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|a eng
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1 |
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|a Jilani, S Mahaboob
|e verfasserin
|4 aut
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| 245 |
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|a Thin-film transistors with a graphene oxide nanocomposite channel
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|c 2012
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 30.07.2013
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|a Date Revised 04.12.2012
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Graphene oxide (GO) and graphene oxide-zinc oxide nanocomposites (GO-ZnO) were used as channel materials on SiO(2)/Si to fabricate thin-film transistors (TFT) with an aluminum source and drain. Pure GO-based TFT showed poor field-effect characteristics. However, GO-ZnO-nanocomposite-based TFT showed better field-effect performance because of the anchoring of ZnO nanostructures in the GO matrix, which causes a partial reduction in GO as is found from X-ray photoelectron spectroscopic data. The field-effect mobility of charge carriers at a drain voltage of 1 V was found to be 1.94 cm(2)/(V s). The transport of charge carriers in GO-ZnO was explained by a fluctuation-induced tunneling mechanism
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|a Journal Article
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|a Gamot, Tanesh D
|e verfasserin
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1 |
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|a Banerji, P
|e verfasserin
|4 aut
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 28(2012), 48 vom: 04. Dez., Seite 16485-9
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|x 1520-5827
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|g volume:28
|g year:2012
|g number:48
|g day:04
|g month:12
|g pages:16485-9
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