Thin-film transistors with a graphene oxide nanocomposite channel
Graphene oxide (GO) and graphene oxide-zinc oxide nanocomposites (GO-ZnO) were used as channel materials on SiO(2)/Si to fabricate thin-film transistors (TFT) with an aluminum source and drain. Pure GO-based TFT showed poor field-effect characteristics. However, GO-ZnO-nanocomposite-based TFT showed...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 28(2012), 48 vom: 04. Dez., Seite 16485-9 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2012
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article |
| Zusammenfassung: | Graphene oxide (GO) and graphene oxide-zinc oxide nanocomposites (GO-ZnO) were used as channel materials on SiO(2)/Si to fabricate thin-film transistors (TFT) with an aluminum source and drain. Pure GO-based TFT showed poor field-effect characteristics. However, GO-ZnO-nanocomposite-based TFT showed better field-effect performance because of the anchoring of ZnO nanostructures in the GO matrix, which causes a partial reduction in GO as is found from X-ray photoelectron spectroscopic data. The field-effect mobility of charge carriers at a drain voltage of 1 V was found to be 1.94 cm(2)/(V s). The transport of charge carriers in GO-ZnO was explained by a fluctuation-induced tunneling mechanism |
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| Beschreibung: | Date Completed 30.07.2013 Date Revised 04.12.2012 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1520-5827 |
| DOI: | 10.1021/la303554z |