Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide

Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 1 vom: 04. Jan., Seite 109-14
1. Verfasser: Balendhran, Sivacarendran (VerfasserIn)
Weitere Verfasser: Deng, Junkai, Ou, Jian Zhen, Walia, Sumeet, Scott, James, Tang, Jianshi, Wang, Kang L, Field, Matthew R, Russo, Salvy, Zhuiykov, Serge, Strano, Michael S, Medhekar, Nikhil, Sriram, Sharath, Bhaskaran, Madhu, Kalantar-zadeh, Kourosh
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
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520 |a We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
700 1 |a Deng, Junkai  |e verfasserin  |4 aut 
700 1 |a Ou, Jian Zhen  |e verfasserin  |4 aut 
700 1 |a Walia, Sumeet  |e verfasserin  |4 aut 
700 1 |a Scott, James  |e verfasserin  |4 aut 
700 1 |a Tang, Jianshi  |e verfasserin  |4 aut 
700 1 |a Wang, Kang L  |e verfasserin  |4 aut 
700 1 |a Field, Matthew R  |e verfasserin  |4 aut 
700 1 |a Russo, Salvy  |e verfasserin  |4 aut 
700 1 |a Zhuiykov, Serge  |e verfasserin  |4 aut 
700 1 |a Strano, Michael S  |e verfasserin  |4 aut 
700 1 |a Medhekar, Nikhil  |e verfasserin  |4 aut 
700 1 |a Sriram, Sharath  |e verfasserin  |4 aut 
700 1 |a Bhaskaran, Madhu  |e verfasserin  |4 aut 
700 1 |a Kalantar-zadeh, Kourosh  |e verfasserin  |4 aut 
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