Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide

Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 1 vom: 04. Jan., Seite 109-14
1. Verfasser: Balendhran, Sivacarendran (VerfasserIn)
Weitere Verfasser: Deng, Junkai, Ou, Jian Zhen, Walia, Sumeet, Scott, James, Tang, Jianshi, Wang, Kang L, Field, Matthew R, Russo, Salvy, Zhuiykov, Serge, Strano, Michael S, Medhekar, Nikhil, Sriram, Sharath, Bhaskaran, Madhu, Kalantar-zadeh, Kourosh
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained
Beschreibung:Date Completed 20.09.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201203346