Active control of ferroelectric switching using defect-dipole engineering

Détails bibliographiques
Publié dans:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 48 vom: 18. Dez., Seite 6490-5
Auteur principal:	Lee, Daesu (Auteur)
Autres auteurs:	Jeon, Byung Chul, Baek, Seung Hyub, Yang, Sang Mo, Shin, Yeong Jae, Kim, Tae Heon, Kim, Yong Su, Yoon, Jong-Gul, Eom, Chang Beom, Noh, Tae Won
Format:	Article en ligne
Langue:	English
Publié:	2012
Accès à la collection:	Advanced materials (Deerfield Beach, Fla.)
Sujets:	Journal Article Research Support, Non-U.S. Gov't Ferric Compounds Bismuth U015TT5I8H


LEADER	01000caa a22002652c 4500
001	NLM221445633
003	DE-627
005	20250214114344.0
007	cr uuu---uuuuu
008	231224s2012 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1002/adma.201203101 \|2 doi
028	5	2	\|a pubmed25n0738.xml
035			\|a (DE-627)NLM221445633
035			\|a (NLM)23023876
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
100	1		\|a Lee, Daesu \|e verfasserin \|4 aut
245	1	0	\|a Active control of ferroelectric switching using defect-dipole engineering
264		1	\|c 2012
336			\|a Text \|b txt \|2 rdacontent
337			\|a ƒaComputermedien \|b c \|2 rdamedia
338			\|a ƒa Online-Ressource \|b cr \|2 rdacarrier
500			\|a Date Completed 14.06.2013
500			\|a Date Revised 30.09.2020
500			\|a published: Print-Electronic
500			\|a Citation Status MEDLINE
520			\|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage
650		4	\|a Journal Article
650		4	\|a Research Support, Non-U.S. Gov't
650		7	\|a Ferric Compounds \|2 NLM
650		7	\|a Bismuth \|2 NLM
650		7	\|a U015TT5I8H \|2 NLM
700	1		\|a Jeon, Byung Chul \|e verfasserin \|4 aut
700	1		\|a Baek, Seung Hyub \|e verfasserin \|4 aut
700	1		\|a Yang, Sang Mo \|e verfasserin \|4 aut
700	1		\|a Shin, Yeong Jae \|e verfasserin \|4 aut
700	1		\|a Kim, Tae Heon \|e verfasserin \|4 aut
700	1		\|a Kim, Yong Su \|e verfasserin \|4 aut
700	1		\|a Yoon, Jong-Gul \|e verfasserin \|4 aut
700	1		\|a Eom, Chang Beom \|e verfasserin \|4 aut
700	1		\|a Noh, Tae Won \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Advanced materials (Deerfield Beach, Fla.) \|d 1998 \|g 24(2012), 48 vom: 18. Dez., Seite 6490-5 \|w (DE-627)NLM098206397 \|x 1521-4095 \|7 nnas
773	1	8	\|g volume:24 \|g year:2012 \|g number:48 \|g day:18 \|g month:12 \|g pages:6490-5
856	4	0	\|u http://dx.doi.org/10.1002/adma.201203101 \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_NLM
912			\|a GBV_ILN_350
951			\|a AR
952			\|d 24 \|j 2012 \|e 48 \|b 18 \|c 12 \|h 6490-5