Active control of ferroelectric switching using defect-dipole engineering

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 48 vom: 18. Dez., Seite 6490-5
Auteur principal: Lee, Daesu (Auteur)
Autres auteurs: Jeon, Byung Chul, Baek, Seung Hyub, Yang, Sang Mo, Shin, Yeong Jae, Kim, Tae Heon, Kim, Yong Su, Yoon, Jong-Gul, Eom, Chang Beom, Noh, Tae Won
Format: Article en ligne
Langue:English
Publié: 2012
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't Ferric Compounds Bismuth U015TT5I8H
Description
Résumé:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage
Description:Date Completed 14.06.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201203101