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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201202794
|2 doi
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|a eng
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|a LeBlanc, Gabriel
|e verfasserin
|4 aut
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|a Enhanced photocurrents of photosystem I films on p-doped silicon
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|c 2012
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 01.05.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Tuning the Fermi energy of silicon through doping leads to alignment of silicon bands with the redox active sites of photosystem I. Integrating photosystem I films with p-doped silicon results in the highest reported photocurrent enhancement for a biohybrid electrode based on photosystem I
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a Photosystem I Protein Complex
|2 NLM
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|a Silicon
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|a Chen, Gongping
|e verfasserin
|4 aut
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|a Gizzie, Evan A
|e verfasserin
|4 aut
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|a Jennings, G Kane
|e verfasserin
|4 aut
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|a Cliffel, David E
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
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|g year:2012
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|g day:20
|g month:11
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|u http://dx.doi.org/10.1002/adma.201202794
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