Enhanced photocurrents of photosystem I films on p-doped silicon

Enhanced photocurrents of photosystem I films on p-doped silicon

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 44 vom: 20. Nov., Seite 5959-62
1. Verfasser: LeBlanc, Gabriel (VerfasserIn)
Weitere Verfasser: Chen, Gongping, Gizzie, Evan A, Jennings, G Kane, Cliffel, David E
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Photosystem I Protein Complex Silicon Z4152N8IUI
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Tuning the Fermi energy of silicon through doping leads to alignment of silicon bands with the redox active sites of photosystem I. Integrating photosystem I films with p-doped silicon results in the highest reported photocurrent enhancement for a biohybrid electrode based on photosystem I
Beschreibung:Date Completed 01.05.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201202794