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231224s2012 xx |||||o 00| ||eng c |
| 024 |
7 |
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|a 10.1021/la3026182
|2 doi
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|a pubmed24n0734.xml
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|a (DE-627)NLM220244693
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|a (NLM)22894745
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Yu, Jie
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Preparation of high-quality colloidal mask for nanosphere lithography by a combination of air/water interface self-assembly and solvent vapor annealing
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|c 2012
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 17.01.2013
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|a Date Revised 28.08.2012
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Nanosphere lithography (NSL) has been regarded as an inexpensive, inherently parallel, high-throughput, materials-general approach to the fabrication of nanoparticle arrays. However, the order of the resulting nanoparticle array is essentially dependent on the quality of the colloidal monolayer mask. Furthermore, the lateral feature size of the nanoparticles created using NSL is coupled with the diameter of the colloidal spheres, which makes it inconvenient for studying the size-dependent properties of nanoparticles. In this work, we demonstrate a facile approach to the fabrication of a large-area, transferrable, high-quality latex colloidal mask for nanosphere lithography. The approach is based on a combination of the air/water interface self-assembly method and the solvent-vapor-annealing technique. It enables the fabrication of colloidal masks with a higher crystalline integrity compared to those produced by other strategies. By manipulating the diameter of the colloidal spheres and precisely tuning the solvent-vapor-annealing process, flexible control of the size, shape, and spacing of the interstice in a colloidal mask can be realized, which may facilitate the broad use of NSL in studying the size-, shape-, and period-dependent optical, magnetic, electronic, and catalytic properties of nanomaterials
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| 650 |
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|a Journal Article
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| 700 |
1 |
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|a Geng, Chong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zheng, Lu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ma, Zhaohui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tan, Tianya
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xiaoqing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yan, Qingfeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shen, Dezhong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 28(2012), 34 vom: 28. Aug., Seite 12681-9
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
1 |
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|g volume:28
|g year:2012
|g number:34
|g day:28
|g month:08
|g pages:12681-9
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| 856 |
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|u http://dx.doi.org/10.1021/la3026182
|3 Volltext
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