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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201201385
|2 doi
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|a pubmed24n0734.xml
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|a eng
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|a Dong, Lin
|e verfasserin
|4 aut
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|a Piezo-phototronic effect of CdSe nanowires
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|c 2012
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|a Text
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|a ƒaComputermedien
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|a Date Completed 26.02.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The piezo-phototronic effect on transport properties of flexible CdSe NW devices is investigated. An optimum sensitivity of the flexible CdSe NW devices can be achieved by adjusting the applied strain and illumination intensity. The piezo-phototronic effect under compressive strain increases the internal electric field of the Schottky barrier, and assists the separation of the photo-excited electron-hole pairs, resulting in the increase of photocurrent. A trap-mediated mechanism is responsible for the decreased hole separation when the strain is larger than the critical strain
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a Cadmium Compounds
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|a Dimethylpolysiloxanes
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|a Selenium Compounds
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| 700 |
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|a Niu, Simiao
|e verfasserin
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|a Pan, Caofeng
|e verfasserin
|4 aut
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|a Yu, Ruomeng
|e verfasserin
|4 aut
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|a Zhang, Yan
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Zhong Lin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 40 vom: 23. Okt., Seite 5470-5
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