Piezo-phototronic effect of CdSe nanowires

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 40 vom: 23. Okt., Seite 5470-5
1. Verfasser: Dong, Lin (VerfasserIn)
Weitere Verfasser: Niu, Simiao, Pan, Caofeng, Yu, Ruomeng, Zhang, Yan, Wang, Zhong Lin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Cadmium Compounds Dimethylpolysiloxanes Selenium Compounds baysilon 63148-62-9 Gold 7440-57-5 mehr... cadmium selenide A7F646JC5C
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The piezo-phototronic effect on transport properties of flexible CdSe NW devices is investigated. An optimum sensitivity of the flexible CdSe NW devices can be achieved by adjusting the applied strain and illumination intensity. The piezo-phototronic effect under compressive strain increases the internal electric field of the Schottky barrier, and assists the separation of the photo-excited electron-hole pairs, resulting in the increase of photocurrent. A trap-mediated mechanism is responsible for the decreased hole separation when the strain is larger than the critical strain
Beschreibung:Date Completed 26.02.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201201385