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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201202148
|2 doi
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|a eng
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|a Hoang, Mai Ha
|e verfasserin
|4 aut
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|a Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins
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|c 2012
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a Date Completed 08.02.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Highly conjugated porphyrin derivatives, H(2) TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm(2) V(-1) s(-1) . Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W(-1) under a very low light intensity (5.6 m W cm(-2) )
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Porphyrins
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|a Kim, Youngmee
|e verfasserin
|4 aut
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|a Kim, Minsik
|e verfasserin
|4 aut
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|a Kim, Kyung Hwan
|e verfasserin
|4 aut
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|a Lee, Tae Wan
|e verfasserin
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|a Nguyen, Duc Nghia
|e verfasserin
|4 aut
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|a Kim, Sung-Jin
|e verfasserin
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|a Lee, Kwangyeol
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|a Lee, Suk Joong
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|a Choi, Dong Hoon
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 39 vom: 09. Okt., Seite 5363-7
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