Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins

Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 39 vom: 09. Okt., Seite 5363-7
1. Verfasser: Hoang, Mai Ha (VerfasserIn)
Weitere Verfasser: Kim, Youngmee, Kim, Minsik, Kim, Kyung Hwan, Lee, Tae Wan, Nguyen, Duc Nghia, Kim, Sung-Jin, Lee, Kwangyeol, Lee, Suk Joong, Choi, Dong Hoon
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Porphyrins
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Highly conjugated porphyrin derivatives, H(2) TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm(2) V(-1) s(-1) . Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W(-1) under a very low light intensity (5.6 m W cm(-2) )
Beschreibung:Date Completed 08.02.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201202148