Resistive switching and magnetic modulation in cobalt-doped ZnO

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 26 vom: 10. Juli, Seite 3515-20
1. Verfasser:	Chen, Guang (VerfasserIn)
Weitere Verfasser:	Song, Cheng, Chen, Chao, Gao, Shuang, Zeng, Fei, Pan, Feng
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2012
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article Research Support, Non-U.S. Gov't Cobalt 3G0H8C9362 Zinc Oxide SOI2LOH54Z


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245	1	0	\|a Resistive switching and magnetic modulation in cobalt-doped ZnO
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336			\|a Text \|b txt \|2 rdacontent
337			\|a ƒaComputermedien \|b c \|2 rdamedia
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500			\|a Date Completed 23.11.2012
500			\|a Date Revised 09.03.2022
500			\|a published: Print-Electronic
500			\|a Citation Status MEDLINE
520			\|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism (spin) and electrical properties (charge) into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy-based conductive filaments. This is promising for broadening the applications of random access memories to encode quaternary information
650		4	\|a Journal Article
650		4	\|a Research Support, Non-U.S. Gov't
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650		7	\|a Zinc Oxide \|2 NLM
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700	1		\|a Chen, Chao \|e verfasserin \|4 aut
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700	1		\|a Zeng, Fei \|e verfasserin \|4 aut
700	1		\|a Pan, Feng \|e verfasserin \|4 aut
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