Resistive switching and magnetic modulation in cobalt-doped ZnO

Resistive switching and magnetic modulation in cobalt-doped ZnO

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 26 vom: 10. Juli, Seite 3515-20
1. Verfasser: Chen, Guang (VerfasserIn)
Weitere Verfasser: Song, Cheng, Chen, Chao, Gao, Shuang, Zeng, Fei, Pan, Feng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Cobalt 3G0H8C9362 Zinc Oxide SOI2LOH54Z
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism (spin) and electrical properties (charge) into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy-based conductive filaments. This is promising for broadening the applications of random access memories to encode quaternary information
Beschreibung:Date Completed 23.11.2012
Date Revised 09.03.2022
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201201595