GaS and GaSe ultrathin layer transistors
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 26 vom: 10. Juli, Seite 3549-54 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2012
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Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
Schlagworte: | Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Sulfides gallium selenide Gallium CH46OC8YV4 Selenium H6241UJ22B |
Zusammenfassung: | Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility |
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Beschreibung: | Date Completed 23.11.2012 Date Revised 30.09.2020 published: Print-Electronic Citation Status MEDLINE |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.201201361 |