GaS and GaSe ultrathin layer transistors

GaS and GaSe ultrathin layer transistors

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 26 vom: 10. Juli, Seite 3549-54
Auteur principal: Late, Dattatray J (Auteur)
Autres auteurs: Liu, Bin, Luo, Jiajun, Yan, Aiming, Matte, H S S Ramakrishna, Grayson, Matthew, Rao, C N R, Dravid, Vinayak P
Format: Article en ligne
Langue:English
Publié: 2012
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Sulfides gallium selenide Gallium CH46OC8YV4 Selenium H6241UJ22B
Description
Résumé:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility
Description:Date Completed 23.11.2012
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201201361