Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 31 vom: 16. Aug., Seite 4296-300 |
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| Auteur principal: | |
| Autres auteurs: | , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2012
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article Research Support, Non-U.S. Gov't Luminescent Agents Nitrates Indium 045A6V3VFX Gallium CH46OC8YV4 gallium nitrate VRA0C6810N plus... |
| Résumé: | Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. An ultrathin (one monolayer thick) InN single quantum well (SQW) formed on a step-free GaN surface shows very sharp violet PL emission. The size (16 μm in diameter) is large enough for state-of-the-art nanotechnology to handle. Longer wavelength emissions, such as green and red, are expected by increasing the thickness of the SQW through the utilization of the quantum size effect |
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| Description: | Date Completed 10.12.2012 Date Revised 30.09.2020 published: Print-Electronic Citation Status MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201200871 |