Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface

Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 31 vom: 16. Aug., Seite 4296-300
1. Verfasser: Akasaka, Tetsuya (VerfasserIn)
Weitere Verfasser: Gotoh, Hideki, Kobayashi, Yasuyuki, Yamamoto, Hideki
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Luminescent Agents Nitrates Indium 045A6V3VFX Gallium CH46OC8YV4 gallium nitrate VRA0C6810N mehr... indium nitrate WOP84073FA
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An ultrathin (one monolayer thick) InN single quantum well (SQW) formed on a step-free GaN surface shows very sharp violet PL emission. The size (16 μm in diameter) is large enough for state-of-the-art nanotechnology to handle. Longer wavelength emissions, such as green and red, are expected by increasing the thickness of the SQW through the utilization of the quantum size effect
Beschreibung:Date Completed 10.12.2012
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201200871