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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2012.2285
|2 doi
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|a pubmed24n0726.xml
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|a (DE-627)NLM218038852
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|a (NLM)22622985
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Aubert, Thierry
|e verfasserin
|4 aut
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|a Investigations on AlN/sapphire piezoelectric bilayer structure for high-temperature SAW applications
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|c 2012
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 25.09.2012
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|a Date Revised 24.05.2012
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a This paper explores the possibility of using AlN/sapphire piezoelectric bilayer structures for high-temperature SAW applications. To determine the temperature stability of AlN, homemade AlN/sapphire samples are annealed in air atmosphere for 2 to 20 h at temperatures from 700 to 1000°C. Ex situ X-ray diffraction measurements reveal that the microstructure of the thin film is not affected by temperatures below 1000°C. Ellipsometry and secondary ion mass spectroscopy investigations attest that AlN/sapphire is reliable up to 700°C. Beyond this temperature, both methods indicate ongoing surface oxidation of AlN. Additionally, Pt/Ta and Al interdigital transducers are patterned on the surface of the AlN film. The resulting SAW devices are characterized up to 500°C and 300°C, respectively, showing reliable frequency response and a large, quasi-constant temperature sensitivity, with a first-order temperature coefficient of frequency around -75 ppm/°C. Between room temperature and 300°C, both electromechanical coupling coefficient K(2) and propagation losses increase, so the evolution of delay lines' insertion losses with temperature strongly depends on the length of the propagation path
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|a Journal Article
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|a Elmazria, Omar
|e verfasserin
|4 aut
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|a Assouar, Badreddine
|e verfasserin
|4 aut
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1 |
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|a Blampain, Eloi
|e verfasserin
|4 aut
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|a Hamdan, Ahmad
|e verfasserin
|4 aut
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|a Genève, Damien
|e verfasserin
|4 aut
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|a Weber, Sylvain
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 59(2012), 5 vom: 25. Mai, Seite 999-1005
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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| 773 |
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|g volume:59
|g year:2012
|g number:5
|g day:25
|g month:05
|g pages:999-1005
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|u http://dx.doi.org/10.1109/TUFFC.2012.2285
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