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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201201004
|2 doi
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|a pubmed25n0724.xml
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|a eng
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1 |
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|a Hu, Jia-Mian
|e verfasserin
|4 aut
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|a Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer
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|c 2012
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 19.09.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Research Support, U.S. Gov't, Non-P.H.S.
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| 700 |
1 |
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|a Li, Zheng
|e verfasserin
|4 aut
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1 |
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|a Chen, Long-Qing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Nan, Ce-Wen
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 21 vom: 05. Juni, Seite 2869-73
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:24
|g year:2012
|g number:21
|g day:05
|g month:06
|g pages:2869-73
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|u http://dx.doi.org/10.1002/adma.201201004
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