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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201104602
|2 doi
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|a pubmed24n0723.xml
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|a eng
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|a Gwinner, Michael C
|e verfasserin
|4 aut
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|a Highly efficient single-layer polymer ambipolar light-emitting field-effect transistors
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|c 2012
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 07.09.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Single-layer polymer light-emitting field-effect transistors (LEFETs) that yield EQEs of >8% and luminance efficiencies >28 cd A(-1) are demonstrated. These values are the highest reported for LEFETs and amongst the highest values for fluorescent OLEDs. Due to the electrostatics of the ambipolar LEFET channel, LEFETs provide an inherent advantage over OLEDs in terms of minimizing exciton-polaron quenching
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Polymers
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|a Polymethyl Methacrylate
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|a 9011-14-7
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|a Zinc Oxide
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|a SOI2LOH54Z
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|a Kabra, Dinesh
|e verfasserin
|4 aut
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|a Roberts, Matthew
|e verfasserin
|4 aut
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|a Brenner, Thomas J K
|e verfasserin
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|a Wallikewitz, Bodo H
|e verfasserin
|4 aut
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|a McNeill, Christopher R
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|a Friend, Richard H
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|a Sirringhaus, Henning
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 20 vom: 22. Mai, Seite 2728-34
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:24
|g year:2012
|g number:20
|g day:22
|g month:05
|g pages:2728-34
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