Highly efficient single-layer polymer ambipolar light-emitting field-effect transistors

Highly efficient single-layer polymer ambipolar light-emitting field-effect transistors

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 20 vom: 22. Mai, Seite 2728-34
1. Verfasser: Gwinner, Michael C (VerfasserIn)
Weitere Verfasser: Kabra, Dinesh, Roberts, Matthew, Brenner, Thomas J K, Wallikewitz, Bodo H, McNeill, Christopher R, Friend, Richard H, Sirringhaus, Henning
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Polymers Polymethyl Methacrylate 9011-14-7 Zinc Oxide SOI2LOH54Z
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Single-layer polymer light-emitting field-effect transistors (LEFETs) that yield EQEs of >8% and luminance efficiencies >28 cd A(-1) are demonstrated. These values are the highest reported for LEFETs and amongst the highest values for fluorescent OLEDs. Due to the electrostatics of the ambipolar LEFET channel, LEFETs provide an inherent advantage over OLEDs in terms of minimizing exciton-polaron quenching
Beschreibung:Date Completed 07.09.2012
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201104602