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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201104597
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|a eng
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|a Zhang, Dayong
|e verfasserin
|4 aut
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|a Understanding charge transfer at PbS-decorated graphene surfaces toward a tunable photosensor
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|c 2012
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|a Text
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|a Date Completed 07.09.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a An intrinsic mechanism of photoinduced hole transfer reactions occurring at the grapheme-PbS interface is described with the purpose of building a tunable photosensor with a responsivity of more than 10(3) A W(-1) . It is remarkable that rational utilization of this finding also realizes symmetric, opposing photoswitching effects, which are effectively mirror images, in a single pristine graphene device. These results highlight the vital importance of interface modification as a powerful tool for creating future ultrasensitive optoelectronic devices
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|a Cao, Yang
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|t Advanced materials (Deerfield Beach, Fla.)
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|g 24(2012), 20 vom: 22. Mai, Seite 2715-20
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