Understanding charge transfer at PbS-decorated graphene surfaces toward a tunable photosensor

Understanding charge transfer at PbS-decorated graphene surfaces toward a tunable photosensor

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 20 vom: 22. Mai, Seite 2715-20
1. Verfasser: Zhang, Dayong (VerfasserIn)
Weitere Verfasser: Gan, Lin, Cao, Yang, Wang, Qing, Qi, Limin, Guo, Xuefeng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Sulfides lead sulfide 2425D15SYM Lead 2P299V784P Graphite 7782-42-5
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An intrinsic mechanism of photoinduced hole transfer reactions occurring at the grapheme-PbS interface is described with the purpose of building a tunable photosensor with a responsivity of more than 10(3) A W(-1) . It is remarkable that rational utilization of this finding also realizes symmetric, opposing photoswitching effects, which are effectively mirror images, in a single pristine graphene device. These results highlight the vital importance of interface modification as a powerful tool for creating future ultrasensitive optoelectronic devices
Beschreibung:Date Completed 07.09.2012
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201104597