Understanding charge transfer at PbS-decorated graphene surfaces toward a tunable photosensor
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 20 vom: 22. Mai, Seite 2715-20 |
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| Auteur principal: | |
| Autres auteurs: | , , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2012
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article Research Support, Non-U.S. Gov't Sulfides lead sulfide 2425D15SYM Lead 2P299V784P Graphite 7782-42-5 |
| Résumé: | Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. An intrinsic mechanism of photoinduced hole transfer reactions occurring at the grapheme-PbS interface is described with the purpose of building a tunable photosensor with a responsivity of more than 10(3) A W(-1) . It is remarkable that rational utilization of this finding also realizes symmetric, opposing photoswitching effects, which are effectively mirror images, in a single pristine graphene device. These results highlight the vital importance of interface modification as a powerful tool for creating future ultrasensitive optoelectronic devices |
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| Description: | Date Completed 07.09.2012 Date Revised 30.09.2020 published: Print-Electronic Citation Status MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201104597 |