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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201104094
|2 doi
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|a pubmed24n0722.xml
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|a (DE-627)NLM216734533
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|a eng
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|a Yang, Jieun
|e verfasserin
|4 aut
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|a Facile method for rGO field effect transistor
|b selective adsorption of rGO on SAM-treated gold electrode by electrostatic attraction
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|c 2012
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 10.08.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Amines
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|a Carboxylic Acids
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|a Oxides
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|a Gold
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|a 7440-57-5
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|a 7782-42-5
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|a Kim, Jung-Woo
|e verfasserin
|4 aut
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|a Shin, Hyeon Suk
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 17 vom: 02. Mai, Seite 2299-303
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|x 1521-4095
|7 nnns
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|g volume:24
|g year:2012
|g number:17
|g day:02
|g month:05
|g pages:2299-303
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|u http://dx.doi.org/10.1002/adma.201104094
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