Facile method for rGO field effect transistor selective adsorption of rGO on SAM-treated gold electrode by electrostatic attraction

Facile method for rGO field effect transistor : selective adsorption of rGO on SAM-treated gold electrode by electrostatic attraction

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 17 vom: 02. Mai, Seite 2299-303
1. Verfasser: Yang, Jieun (VerfasserIn)
Weitere Verfasser: Kim, Jung-Woo, Shin, Hyeon Suk
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Amines Carboxylic Acids Oxides Gold 7440-57-5 Graphite 7782-42-5
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers
Beschreibung:Date Completed 10.08.2012
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201104094