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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201104648
|2 doi
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|a pubmed24n0721.xml
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|a eng
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|a Son, Jun Ho
|e verfasserin
|4 aut
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|a Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection
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|c 2012
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 10.08.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Cone-shaped nanostructures with controllable side-wall angle are success- fully fabricated with a SiO(2) nanosphere lithography (NSL) etching mask. Vertical LEDs with cone-shaped nanostructures with a 24.1° side-wall angle provide 6% more light output power compared to those using hexagonal pyramids formed by photochemical etching. This achievement is attributed to effective elimination of total internal reflection by angle-controlled nanostructures
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Silicon Dioxide
|2 NLM
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|a 7631-86-9
|2 NLM
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| 700 |
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|a Kim, Jong Uk
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Song, Yang Hee
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Buem Joon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ryu, Chul Jong
|e verfasserin
|4 aut
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| 700 |
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|a Lee, Jong-Lam
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 17 vom: 02. Mai, Seite 2259-62
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|g volume:24
|g year:2012
|g number:17
|g day:02
|g month:05
|g pages:2259-62
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|u http://dx.doi.org/10.1002/adma.201104648
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