Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection

Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 17 vom: 02. Mai, Seite 2259-62
1. Verfasser: Son, Jun Ho (VerfasserIn)
Weitere Verfasser: Kim, Jong Uk, Song, Yang Hee, Kim, Buem Joon, Ryu, Chul Jong, Lee, Jong-Lam
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Silicon Dioxide 7631-86-9
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Cone-shaped nanostructures with controllable side-wall angle are success- fully fabricated with a SiO(2) nanosphere lithography (NSL) etching mask. Vertical LEDs with cone-shaped nanostructures with a 24.1° side-wall angle provide 6% more light output power compared to those using hexagonal pyramids formed by photochemical etching. This achievement is attributed to effective elimination of total internal reflection by angle-controlled nanostructures
Beschreibung:Date Completed 10.08.2012
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201104648