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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201104796
|2 doi
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|a pubmed24n0720.xml
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|a eng
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|a Liao, Zhi-Min
|e verfasserin
|4 aut
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|a Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry
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|c 2012
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|a Text
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|a ƒaComputermedien
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|a Date Completed 16.07.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a 7782-42-5
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|a Wu, Han-Chun
|e verfasserin
|4 aut
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|a Kumar, Shishir
|e verfasserin
|4 aut
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|a Duesberg, Georg S
|e verfasserin
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|a Zhou, Yang-Bo
|e verfasserin
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|a Cross, Graham L W
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|a Shvets, Igor V
|e verfasserin
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|a Yu, Da-Peng
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 14 vom: 10. Apr., Seite 1862-6
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:24
|g year:2012
|g number:14
|g day:10
|g month:04
|g pages:1862-6
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|u http://dx.doi.org/10.1002/adma.201104796
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