Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 14 vom: 10. Apr., Seite 1862-6
1. Verfasser: Liao, Zhi-Min (VerfasserIn)
Weitere Verfasser: Wu, Han-Chun, Kumar, Shishir, Duesberg, Georg S, Zhou, Yang-Bo, Cross, Graham L W, Shvets, Igor V, Yu, Da-Peng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Silicon Dioxide 7631-86-9 Graphite 7782-42-5
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications
Beschreibung:Date Completed 16.07.2012
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201104796