Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors

Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 9 vom: 02. März, Seite 1171-5
1. Verfasser: Hsu, Ben B Y (VerfasserIn)
Weitere Verfasser: Duan, Chunhui, Namdas, Ebinazar B, Gutacker, Andrea, Yuen, Jonathan D, Huang, Fei, Cao, Yong, Bazan, Guillermo C, Samuel, Ifor D W, Heeger, Alan J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S.
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520 |a The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency 
650 4 |a Journal Article 
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650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
700 1 |a Duan, Chunhui  |e verfasserin  |4 aut 
700 1 |a Namdas, Ebinazar B  |e verfasserin  |4 aut 
700 1 |a Gutacker, Andrea  |e verfasserin  |4 aut 
700 1 |a Yuen, Jonathan D  |e verfasserin  |4 aut 
700 1 |a Huang, Fei  |e verfasserin  |4 aut 
700 1 |a Cao, Yong  |e verfasserin  |4 aut 
700 1 |a Bazan, Guillermo C  |e verfasserin  |4 aut 
700 1 |a Samuel, Ifor D W  |e verfasserin  |4 aut 
700 1 |a Heeger, Alan J  |e verfasserin  |4 aut 
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