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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201103829
|2 doi
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|a pubmed24n0714.xml
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|a eng
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|a Yoo, Hyobin
|e verfasserin
|4 aut
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|a Microstructures of GaN thin films grown on graphene layers
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|c 2012
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|a Text
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|a ƒaComputermedien
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|a Date Completed 14.05.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a ErratumIn: Adv Mater. 2012 Apr 10;24(14):1780
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed
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|a Yi, Gyu-Chul
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