Microstructures of GaN thin films grown on graphene layers

Microstructures of GaN thin films grown on graphene layers

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 4 vom: 24. Jan., Seite 515-8
1. Verfasser: Yoo, Hyobin (VerfasserIn)
Weitere Verfasser: Chung, Kunook, Choi, Yong Seok, Kang, Chan Soon, Oh, Kyu Hwan, Kim, Miyoung, Yi, Gyu-Chul
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't gallium nitride 1R9CC3P9VL Graphite 7782-42-5 Gallium CH46OC8YV4 Zinc Oxide SOI2LOH54Z
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed
Beschreibung:Date Completed 14.05.2012
Date Revised 30.09.2020
published: Print-Electronic
ErratumIn: Adv Mater. 2012 Apr 10;24(14):1780
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201103829