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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201103411
|2 doi
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|a pubmed24n0712.xml
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|a (DE-627)NLM213781190
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|a (NLM)22161977
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|a DE-627
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|a eng
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|a Park, Jaesung
|e verfasserin
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|a Single-gate bandgap opening of bilayer graphene by dual molecular doping
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|c 2012
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 18.08.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2 -functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a bandgap opening
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|a bilayer graphene
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|a field-effect transistors
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|a molecular doping
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|a self-assembled monolayers
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|a Amines
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|a Oxides
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|a Graphite
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|a 7782-42-5
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|a Silicon
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|a Z4152N8IUI
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|a Jo, Sae Byeok
|e verfasserin
|4 aut
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|a Yu, Young-Jun
|e verfasserin
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|a Kim, Youngsoo
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|a Yang, Jae Won
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|a Lee, Wi Hyoung
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|a Kim, Hyun Ho
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|a Hong, Byung Hee
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|a Kim, Philip
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|a Cho, Kilwon
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|a Kim, Kwang S
|e verfasserin
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 3 vom: 17. Jan., Seite 407-11
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:24
|g year:2012
|g number:3
|g day:17
|g month:01
|g pages:407-11
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|u http://dx.doi.org/10.1002/adma.201103411
|3 Volltext
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