Single-gate bandgap opening of bilayer graphene by dual molecular doping

Single-gate bandgap opening of bilayer graphene by dual molecular doping

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 3 vom: 17. Jan., Seite 407-11
1. Verfasser: Park, Jaesung (VerfasserIn)
Weitere Verfasser: Jo, Sae Byeok, Yu, Young-Jun, Kim, Youngsoo, Yang, Jae Won, Lee, Wi Hyoung, Kim, Hyun Ho, Hong, Byung Hee, Kim, Philip, Cho, Kilwon, Kim, Kwang S
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't bandgap opening bilayer graphene field-effect transistors molecular doping self-assembled monolayers Amines Oxides Graphite mehr... 7782-42-5 Silicon Z4152N8IUI
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2 -functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure
Beschreibung:Date Completed 18.08.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201103411