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|a (NLM)22053111
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|a DE-627
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|c DE-627
|e rakwb
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|a eng
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|a Ogawa, Shingo
|e verfasserin
|4 aut
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|a Insight into unusual impurity absorbability of GeO(2) in GeO(2)∕Ge stacks
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|c 2011
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|b nc
|2 rdacarrier
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|a Date Revised 20.10.2021
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a Adsorbed species and its diffusion behaviors in GeO(2)∕Ge stacks, which are future alternative metal-oxide-semiconductor (MOS) materials, have been investigated using various physical analyses. We clarified that GeO(2) rapidly absorbs moisture in air just after its exposure. After the absorbed moisture in GeO(2) reaches a certain limit, the GeO(2) starts to absorb some organic molecules, which is accompanied by a structural change in GeO(2) to form a partial carbonate or hydroxide. We also found that the hydrogen distribution in GeO(2) shows intrinsic characteristics, indicative of different diffusion behaviors at the surface and at the GeO(2)∕Ge interface. Because the impurity absorbability of GeO(2) has a great influence on the electrical properties in Ge-MOS devices, these results provide valuable information in realizing high quality GeO(2)∕Ge stacks for the actual use of Ge-MOS technologies
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|a Journal Article
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|a Suda, Taichi
|e verfasserin
|4 aut
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|a Yamamoto, Takashi
|e verfasserin
|4 aut
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|a Kutsuki, Katsuhiro
|e verfasserin
|4 aut
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|a Hideshima, Iori
|e verfasserin
|4 aut
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| 700 |
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|a Hosoi, Takuji
|e verfasserin
|4 aut
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|a Shimura, Takayoshi
|e verfasserin
|4 aut
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|a Watanabe, Heiji
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Applied physics letters
|d 1998
|g 99(2011), 14 vom: 03. Okt., Seite 142101-1421013
|w (DE-627)NLM098165984
|x 0003-6951
|7 nnns
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| 773 |
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|g volume:99
|g year:2011
|g number:14
|g day:03
|g month:10
|g pages:142101-1421013
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|d 99
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|e 14
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|h 142101-1421013
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