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231224s2011 xx |||||o 00| ||eng c |
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|a 10.1021/la2033324
|2 doi
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|a eng
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| 100 |
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|a Liu, Nanliu
|e verfasserin
|4 aut
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|a High-performance, all-solution-processed organic nanowire transistor arrays with inkjet-printing patterned electrodes
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|c 2011
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a Date Completed 24.04.2012
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|a Date Revised 14.12.2011
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2011 American Chemical Society
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|a Organic nanowire (NW) transistor arrays with a mobility of as high as 1.26 cm(2)·V(-1)·S(-1) are fabricated by combining the dip-coating process to align the NW into arrays with the inkjet printing process to pattern the source/drain electrodes. A narrow gap of ~20 μm has been obtained by modifying the inkjet process. The all-solution process is proven to be a low-cost, high-yield, simple approach to fabricating high-performance organic NW transistor arrays over a large area
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Zhou, Yan
|e verfasserin
|4 aut
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| 700 |
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|a Ai, Na
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Luo, Chan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Peng, Junbiao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jian
|e verfasserin
|4 aut
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|a Pei, Jian
|e verfasserin
|4 aut
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|a Cao, Yong
|e verfasserin
|4 aut
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|t Langmuir : the ACS journal of surfaces and colloids
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|g 27(2011), 24 vom: 20. Dez., Seite 14710-5
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|g volume:27
|g year:2011
|g number:24
|g day:20
|g month:12
|g pages:14710-5
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|u http://dx.doi.org/10.1021/la2033324
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