High-performance, all-solution-processed organic nanowire transistor arrays with inkjet-printing patterned electrodes

High-performance, all-solution-processed organic nanowire transistor arrays with inkjet-printing patterned electrodes

© 2011 American Chemical Society

Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 27(2011), 24 vom: 20. Dez., Seite 14710-5
1. Verfasser: Liu, Nanliu (VerfasserIn)
Weitere Verfasser: Zhou, Yan, Ai, Na, Luo, Chan, Peng, Junbiao, Wang, Jian, Pei, Jian, Cao, Yong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2011
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
Beschreibung
Zusammenfassung:© 2011 American Chemical Society
Organic nanowire (NW) transistor arrays with a mobility of as high as 1.26 cm(2)·V(-1)·S(-1) are fabricated by combining the dip-coating process to align the NW into arrays with the inkjet printing process to pattern the source/drain electrodes. A narrow gap of ~20 μm has been obtained by modifying the inkjet process. The all-solution process is proven to be a low-cost, high-yield, simple approach to fabricating high-performance organic NW transistor arrays over a large area
Beschreibung:Date Completed 24.04.2012
Date Revised 14.12.2011
published: Print-Electronic
Citation Status MEDLINE
ISSN:1520-5827
DOI:10.1021/la2033324