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231224s2011 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201101309
|2 doi
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|a pubmed24n0700.xml
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|a eng
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|a Leite, Marina S
|e verfasserin
|4 aut
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|a Wafer-scale strain engineering of ultrathin semiconductor crystalline layers
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|c 2011
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 20.04.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The fabrication of a wafer-scale dislocation-free, fully relaxed single crystalline template for epitaxial growth is demonstrated. Transferring biaxially-strained Inx Ga1-x As ultrathin films from InP substrates to a handle support results in full strain relaxation and the Inx Ga1-x As unit cell assumes its bulk value. Our realization demonstrates the ability to control the lattice parameter and energy band structure of single layer crystalline compound semiconductors in an unprecedented way
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|a Journal Article
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a epitaxial growth
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|a photovoltaics
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|a semiconductors
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|a strain
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|a thin films
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|a Warmann, Emily C
|e verfasserin
|4 aut
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|a Kimball, Gregory M
|e verfasserin
|4 aut
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1 |
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|a Burgos, Stanley P
|e verfasserin
|4 aut
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|a Callahan, Dennis M
|e verfasserin
|4 aut
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|a Atwater, Harry A
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 23(2011), 33 vom: 01. Sept., Seite 3801-7
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:23
|g year:2011
|g number:33
|g day:01
|g month:09
|g pages:3801-7
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|u http://dx.doi.org/10.1002/adma.201101309
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