Wafer-scale strain engineering of ultrathin semiconductor crystalline layers

Wafer-scale strain engineering of ultrathin semiconductor crystalline layers

Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 33 vom: 01. Sept., Seite 3801-7
1. Verfasser: Leite, Marina S (VerfasserIn)
Weitere Verfasser: Warmann, Emily C, Kimball, Gregory M, Burgos, Stanley P, Callahan, Dennis M, Atwater, Harry A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2011
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, U.S. Gov't, Non-P.H.S. epitaxial growth photovoltaics semiconductors strain thin films
Beschreibung
Zusammenfassung:Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The fabrication of a wafer-scale dislocation-free, fully relaxed single crystalline template for epitaxial growth is demonstrated. Transferring biaxially-strained Inx Ga1-x As ultrathin films from InP substrates to a handle support results in full strain relaxation and the Inx Ga1-x As unit cell assumes its bulk value. Our realization demonstrates the ability to control the lattice parameter and energy band structure of single layer crystalline compound semiconductors in an unprecedented way
Beschreibung:Date Completed 20.04.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201101309