Nanoscale semiconductor "X" on substrate "Y"--processes, devices, and applications

Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 28 vom: 26. Juli, Seite 3115-27
1. Verfasser: Madsen, Morten (VerfasserIn)
Weitere Verfasser: Takei, Kuniharu, Kapadia, Rehan, Fang, Hui, Ko, Hyunhyub, Takahashi, Toshitake, Ford, Alexandra C, Lee, Min Hyung, Javey, Ali
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2011
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Review Silicon Dioxide 7631-86-9 Silicon Z4152N8IUI
LEADER 01000naa a22002652 4500
001 NLM209054565
003 DE-627
005 20231224005104.0
007 cr uuu---uuuuu
008 231224s2011 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201101192  |2 doi 
028 5 2 |a pubmed24n0697.xml 
035 |a (DE-627)NLM209054565 
035 |a (NLM)21661066 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Madsen, Morten  |e verfasserin  |4 aut 
245 1 0 |a Nanoscale semiconductor "X" on substrate "Y"--processes, devices, and applications 
264 1 |c 2011 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 22.11.2011 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status MEDLINE 
520 |a Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Recent advancements in the integration of nanoscale, single-crystalline semiconductor 'X' on substrate 'Y' (XoY) for use in transistor and sensor applications are presented. XoY is a generic materials framework for enabling the fabrication of various novel devices, without the constraints of the original growth substrates. Two specific XoY process schemes, along with their associated materials, device and applications are presented. In one example, the layer transfer of ultrathin III-V semiconductors with thicknesses of just a few nanometers on Si substrates is explored for use as energy-efficient electronics, with the fabricated devices exhibiting excellent electrical properties. In the second example, contact printing of nanowire-arrays on thin, bendable substrates for use as artificial electronic-skin is presented. Here, the devices are capable of conformably covering any surface, and providing a real-time, two-dimensional mapping of external stimuli for the realization of smart functional surfaces. This work is an example of the emerging field of "translational nanotechnology" as it bridges basic science of nanomaterials with practical applications 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 4 |a Review 
650 7 |a Silicon Dioxide  |2 NLM 
650 7 |a 7631-86-9  |2 NLM 
650 7 |a Silicon  |2 NLM 
650 7 |a Z4152N8IUI  |2 NLM 
700 1 |a Takei, Kuniharu  |e verfasserin  |4 aut 
700 1 |a Kapadia, Rehan  |e verfasserin  |4 aut 
700 1 |a Fang, Hui  |e verfasserin  |4 aut 
700 1 |a Ko, Hyunhyub  |e verfasserin  |4 aut 
700 1 |a Takahashi, Toshitake  |e verfasserin  |4 aut 
700 1 |a Ford, Alexandra C  |e verfasserin  |4 aut 
700 1 |a Lee, Min Hyung  |e verfasserin  |4 aut 
700 1 |a Javey, Ali  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 23(2011), 28 vom: 26. Juli, Seite 3115-27  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:23  |g year:2011  |g number:28  |g day:26  |g month:07  |g pages:3115-27 
856 4 0 |u http://dx.doi.org/10.1002/adma.201101192  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 23  |j 2011  |e 28  |b 26  |c 07  |h 3115-27