Nanoscale semiconductor "X" on substrate "Y"--processes, devices, and applications
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 28 vom: 26. Juli, Seite 3115-27 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2011
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Review Silicon Dioxide 7631-86-9 Silicon Z4152N8IUI |
| Zusammenfassung: | Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Recent advancements in the integration of nanoscale, single-crystalline semiconductor 'X' on substrate 'Y' (XoY) for use in transistor and sensor applications are presented. XoY is a generic materials framework for enabling the fabrication of various novel devices, without the constraints of the original growth substrates. Two specific XoY process schemes, along with their associated materials, device and applications are presented. In one example, the layer transfer of ultrathin III-V semiconductors with thicknesses of just a few nanometers on Si substrates is explored for use as energy-efficient electronics, with the fabricated devices exhibiting excellent electrical properties. In the second example, contact printing of nanowire-arrays on thin, bendable substrates for use as artificial electronic-skin is presented. Here, the devices are capable of conformably covering any surface, and providing a real-time, two-dimensional mapping of external stimuli for the realization of smart functional surfaces. This work is an example of the emerging field of "translational nanotechnology" as it bridges basic science of nanomaterials with practical applications |
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| Beschreibung: | Date Completed 22.11.2011 Date Revised 30.09.2020 published: Print-Electronic Citation Status MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201101192 |