Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rot...

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Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 5 vom: 01. Feb., Seite 659-63
1. Verfasser: Rykaczewski, Konrad (VerfasserIn)
Weitere Verfasser: Hildreth, Owen J, Wong, Ching P, Fedorov, Andrei G, Scott, John Henry J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2011
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Letter Research Support, American Recovery and Reinvestment Act Research Support, U.S. Gov't, Non-P.H.S. Silicon Z4152N8IUI
LEADER 01000naa a22002652 4500
001 NLM205428126
003 DE-627
005 20231223233930.0
007 cr uuu---uuuuu
008 231223s2011 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201003833  |2 doi 
028 5 2 |a pubmed24n0685.xml 
035 |a (DE-627)NLM205428126 
035 |a (NLM)21274916 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Rykaczewski, Konrad  |e verfasserin  |4 aut 
245 1 0 |a Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon 
264 1 |c 2011 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 02.05.2011 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status MEDLINE 
520 |a A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry 
650 4 |a Letter 
650 4 |a Research Support, American Recovery and Reinvestment Act 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 7 |a Silicon  |2 NLM 
650 7 |a Z4152N8IUI  |2 NLM 
700 1 |a Hildreth, Owen J  |e verfasserin  |4 aut 
700 1 |a Wong, Ching P  |e verfasserin  |4 aut 
700 1 |a Fedorov, Andrei G  |e verfasserin  |4 aut 
700 1 |a Scott, John Henry J  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 23(2011), 5 vom: 01. Feb., Seite 659-63  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:23  |g year:2011  |g number:5  |g day:01  |g month:02  |g pages:659-63 
856 4 0 |u http://dx.doi.org/10.1002/adma.201003833  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 23  |j 2011  |e 5  |b 01  |c 02  |h 659-63