Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions

Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions

Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, are demonstrated. Moreover, a CdSe-nanowire red-light detector powered by a nanoscale ZnO/GaN photovoltaic cell is also demonstrated, which...

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Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 5 vom: 01. Feb., Seite 649-53
1. Verfasser: Bie, Ya-Qing (VerfasserIn)
Weitere Verfasser: Liao, Zhi-Min, Zhang, Hong-Zhou, Li, Guang-Ru, Ye, Yu, Zhou, Yang-Bo, Xu, Jun, Qin, Zhi-Xin, Dai, Lun, Yu, Da-Peng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2011
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't gallium nitride 1R9CC3P9VL Gallium CH46OC8YV4 Zinc Oxide SOI2LOH54Z
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520 |a Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, are demonstrated. Moreover, a CdSe-nanowire red-light detector powered by a nanoscale ZnO/GaN photovoltaic cell is also demonstrated, which extends the device function to a selective multiwavelength photodetector and shows the function of an optical logical AND gate 
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700 1 |a Liao, Zhi-Min  |e verfasserin  |4 aut 
700 1 |a Zhang, Hong-Zhou  |e verfasserin  |4 aut 
700 1 |a Li, Guang-Ru  |e verfasserin  |4 aut 
700 1 |a Ye, Yu  |e verfasserin  |4 aut 
700 1 |a Zhou, Yang-Bo  |e verfasserin  |4 aut 
700 1 |a Xu, Jun  |e verfasserin  |4 aut 
700 1 |a Qin, Zhi-Xin  |e verfasserin  |4 aut 
700 1 |a Dai, Lun  |e verfasserin  |4 aut 
700 1 |a Yu, Da-Peng  |e verfasserin  |4 aut 
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